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(R)
X00602MA
0.8A SCRs
SENSITIVE
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 600 200 Unit A V A
G
A
K
DESCRIPTION Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interrupters, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ...
KG
A
TO-92
ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180 conduction angle) Average on-state current (180 conduction angle) Non repetitive surge peak on-state current It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms Tj = 25C tp = 10 ms tp = 10ms F = 60 Hz tp = 20 s Tj = 25C Tj = 125C Tj = 125C Tj = 125C 9 0.25 50 1 0.1 - 40 to + 125 - 40 to + 125 A2S A/s A W C Tl = 85C Tl = 85C Value 0.8 0.5 10 A Unit A A
I t dI/dt IGM PG(AV) Tstg Tj
January 2002 - Ed: 5
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X00602MA
ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified)
Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG = 10 A IT = 50 mA IG = 1 mA ITM = 1 A RGK = 1 k RGK = 1 k RGK = 1 k Tj = 125C Tj = 25C Tj = 125C Tj = 125C Tj = 25C Tj = 125C tp = 380 s RL = 3.3 k RGK = 1 k Tj = 125C Test Conditions MIN. VD = 12 V RL = 140 MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. X00602MA 15 200 0.8 0.2 5 5 6 25 1.35 0.85 245 1 100 Unit A A V V V mA mA V/s V V m A
VD = 67 % VDRM
Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 k
THERMAL RESISTANCES
Symbol Rth(j-l) Rth(j-a) Junction to lead (DC) Junction to ambient (DC) Parameter Value 70 150 Unit C/W C/W
PRODUCT SELECTOR
Part Number X00602MA Voltage 600 V Sensitivity 200 A Package TO-92
ORDERING INFORMATION
X
SENSITIVE SCR SERIES CURRENT: 0.8A
006
02
M
A
Blank
1AA2
PACKING MODE: 1AA2: Bulk 2AL2: Ammopack 5AL2: Tape & reel
VOLTAGE: M: 600V SENSITIVITY: 02: 200A
PACKAGE: A: TO-92
OTHER INFORMATION
Part Number X00602MA 1AA2 X00602MA 2AL2 X00602MA 5AL2 Marking X0602MA X0602MA X0602MA Weight 0.2 g 0.2 g 0.2 g Base Quantity 2500 2000 2000 Packing mode Bulk Ammopack Tape & reel
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X00602MA
Fig. 1: Maximum average power dissipation versus average on-state current.
P(W) 0.65 0.60 = 180 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.1
Fig. 2-1: Average and D.C. on-state current versus lead temperature.
IT(av)(A) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
D.C.
= 180
360
IT(av)(A) 0.2 0.3 0.4
Tlead(C) 0 25 50 75 100 125
0.5
0.6
Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout).
IT(av)(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration.
K = [Zth(j-a)/Rth(j-a)] 1.00
D.C.
= 180
0.10
Tamb(C) 0 25 50 75 100 125 0.01 1E-2 1E-1
tp(s) 1E+0 1E+1 1E+2 5E+2
Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature.
IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 C] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 Tj(C) 40 60 80 100 120 140
IGT IH & IL
Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values).
IH[Rgk]/IH[Rgk=1k]
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1E-2 1E-1
Rgk(k)
1E+0 1E+1 1E+2
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X00602MA
Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values).
dV/dt[Rgk]/dV/dt[Rgk=1k]
1E+2
Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values).
dV/dt[Cgk]/dV/dt[Rgk=1k]
20 10
1E+1
1E+0
5
1E-1
2
Rgk(k)
1E-2 1E-2 1E-1 1E+0 1E+1 1 1 2
Cgk(nF)
5 10
Fig. 8: Surge peak on-state current versus number of cycles.
Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of It.
ITSM(A),I 2t(A2s) 100.0
ITSM Tj initial = 25 C
10 9 8 7 6 5 4 3 2 1 0
ITSM(A)
tp=10ms
Onecycle
Nonrepetitive Tjinitial=25C Repetitive T amb=25C
10.0
1.0 Number of cycles tp(ms) 0.1 0.01 0.10 1.00
I2t
1
10
100
1000
10.00
Fig. 10: On-state characteristics (maximum values).
ITM(A) 1E+1
Tj max.: Vto = 0.85V Rd = 245m
1E+0
Tj = Tjmax. Tj = 25C
1E-1
VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5
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X00602MA
PACKAGE MECHANICAL DATA TO-92 (Plastic)
DIMENSIONS
A a B C
REF.
Millimeters Min. Typ. 1.35 4.70 2.54 4.40 12.70 3.70 0.50 0.173 0.500 Max. Min.
Inches Typ. 0.053 0.185 0.100 Max.
F
D
E
A B C D E F a
0.146 0.019
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com
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